Resistance-based memory cells with multiple source lines

摘要

In a particular embodiment, a device includes a resistance-based memory cell having multiple source lines and multiple access transistors. A coupling configuration of the multiple access transistors to multiple source lines encodes a data value.

主权项

1. A device comprising:
a memory cell comprising a resistance-based storage element coupled to multiple access transistors, wherein a coupling configuration of the multiple access transistors to multiple conductive lines stores a first data value while the resistance-based storage element stores a second data value, wherein the first data value comprises a read-only memory (ROM) data value and wherein the second data value comprises a random access memory (RAM) data value.