发明名称 Integrated circuit with on die termination and reference voltage generation and methods of using the same
摘要 An integrated circuit includes a data input such as a data pad for receiving an external data signal input and an on-die termination (ODT) information input for receiving ODT information from an external device. An ODT circuit selectively couples a termination resistor to the data pad based on the ODT information. An input buffer is coupled to the data pad for determining data that is input into the pad using a reference voltage. A reference voltage generator is coupled to the input buffer and generates the reference voltage on the basis of the ODT information.
申请公布号 US9196325(B2) 申请公布日期 2015.11.24
申请号 US201414248447 申请日期 2014.04.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Eom Yoon-Joo;Moon Byongmo;Bae Yongcheol
分类号 G11C7/10;H03K19/00;G11C7/22;G11C11/4076;G11C11/4093 主分类号 G11C7/10
代理机构 Muir Patent Law, PLLC 代理人 Muir Patent Law, PLLC
主权项 1. An integrated circuit comprising: a pad configured to receive an external data signal input; an on-die termination (ODT) information input configured to receive ODT information from an external device; an ODT circuit configured to selectively couple a termination resistor to the pad based on the ODT information; an input buffer coupled to the pad and configured to determine a data value based on a reference voltage; and a reference voltage generator coupled to the input buffer and configured to generate the reference voltage based on the ODT information, wherein the termination resistor comprises at least one pull-up resistor and at least one pull-down resistor, and the ODT circuit includes: a pull-up termination circuit including the at least one pull-up resistor selectively coupled between the pad and a first power supply voltage based on the ODT information; anda pull-down termination circuit including the at least one pull-down resistor selectively coupled between the pad and a second power supply voltage based on the ODT information, and wherein the ODT information comprises on/off information indicating a first selection of ODT operation between an on state and an off state and information indicating a second selection between the pull-up termination circuit and the pull-down termination circuit.
地址 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR