| 摘要 |
The present invention is, in a method for manufacturing SOI wafer of forming an oxide film on a bond wafer consisting of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and a base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer, the method for manufacturing SOI wafer that the oxide film to be formed on the bond wafer is made such that the oxide film on a back surface is made thicker than the oxide film on a bonded face. Thereby, there is provided the method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI wafer and the bond wafer after delamination generated in a case where it has been delaminated by an ion implantation delamination method. |
