| 摘要 |
According to one embodiment, a semiconductor light emitting device (1, 2, 3, 5) includes a semiconductor layer (15), a p-side electrode (16), an n-side electrode (17), a fluorescent material layer (30) and a reflection film. The semiconductor layer has a first surface (15a) and a second surface (15b) on an opposite side to the first surface and includes a light emitting layer (13). The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials (31) and a bonding material. The bonding material integrates the fluorescent materials. The reflection film is partially provided on the fluorescent material layer (30) and has a higher reflectance to the radiated light of the light emitting layer (13) than to the radiated light of the fluorescent materials (31). |
