SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device arranged so that the concentration of an electric field caused at switching can be eased.SOLUTION: A silicon carbide semiconductor device 100 comprises: a first conductivity type silicon carbide semiconductor layer 1b; a field dielectric film 3 formed on a surface of the silicon carbide semiconductor layer 1b; a Schottky electrode 4 formed on a surface of the silicon carbide semiconductor layer 1b on the inner peripheral side of the field dielectric film 3 so as to partially overlie the field dielectric film 3; a surface electrode 5 covering the Schottky electrode 4, and extending across an outer peripheral edge of the Schottky electrode 4 to or over a part of the field dielectric film 3; and a second conductivity-type termination well region 2 formed in an upper portion in the silicon carbide semiconductor layer 1b so as to be in contact with part of the Schottky electrode 4, and extending on the outer peripheral side of an outer peripheral edge of the surface electrode 5 in the silicon carbide semiconductor layer 1b. The outer peripheral edge of the surface electrode 5 is located on the inner side of the outer peripheral edge of the terminal well region 2 by 15 μm or more.