| 发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC CIRCUIT USING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the occurrence of a characteristic change.SOLUTION: A normally-off semiconductor device in which when a voltage exceeding a threshold voltage is applied to a control gate electrode 10, a current flows from a second electrode 12 to a first electrode 11 via a 2DEG layer 6 comprises a floating gate 8 which is connected with an external circuit 13 and maintained at predetermined potential. |
| 申请公布号 |
JP2015211104(A) |
申请公布日期 |
2015.11.24 |
| 申请号 |
JP20140091099 |
申请日期 |
2014.04.25 |
| 申请人 |
DENSO CORP;TOYOTA CENTRAL R&D LABS INC |
发明人 |
HOSHI SHINICHI;ARAKAWA KAZUKI;MIZUNO SHOJI;ITO KENJI;UESUGI TSUTOMU |
| 分类号 |
H01L27/095;H01L21/336;H01L21/337;H01L21/338;H01L29/778;H01L29/78;H01L29/786;H01L29/808;H01L29/812 |
主分类号 |
H01L27/095 |
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