Manufacturing method of light-emitting device with nano-imprinting wiring

摘要

Provided is a light-emitting device in which a voltage drop is suppressed and light extraction efficiency is increased. Provided is a light-emitting device with increased productivity. Provided is a light-emitting device with high reliability. An extremely thin conductive film from 3 nm to 50 nm is used as an electrode on a light-emitting side and an auxiliary wiring is provided in contact with the electrode. When the width of the auxiliary wiring is 100 μm or less, the auxiliary wiring is hardly perceived with the naked eye, so that a light-emitting device in which light extraction efficiency is increased and luminance is obtained uniformly. The extremely thin auxiliary wiring can be formed by nanoimprinting technology. With use of nanoimprinting technology, the width of the auxiliary wiring can be reduced to 10 nm or less.

主权项

1. A method for manufacturing a light-emitting device, comprising the steps of:
forming a first auxiliary wiring over an insulating surface; forming a first electrode layer over and in contact with the first auxiliary wiring; forming a layer containing a light-emitting organic compound over the first electrode layer; forming a second electrode layer over the layer; forming a second auxiliary wiring over and in contact with the second electrode layer; and forming a graphene film over the second electrode layer and the second auxiliary wiring, wherein the first electrode layer has a reflective property with respect to light emitted from the layer, wherein the second electrode layer has a light-transmitting property with respect to light emitted from the layer, wherein the first auxiliary wiring overlaps the second auxiliary wiring, and wherein a thickness of the second electrode layer is from 3 nm to 50 nm.