发明名称 Method for chemical planarization and chemical planarization apparatus
摘要 According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.
申请公布号 US9196501(B2) 申请公布日期 2015.11.24
申请号 US201213422969 申请日期 2012.03.16
申请人 Kabushiki Kaisha Toshiba 发明人 Kodera Masako;Matsui Yukiteru
分类号 B44C1/22;H01L21/302;H01L21/461;H01L21/3105 主分类号 B44C1/22
代理机构 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. 代理人 Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
主权项 1. A method for chemical planarization comprising: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved in the hydrosilicofluoric acid aqueous solution at a saturated concentration; preparing a silicon dioxide film having an irregularity, the irregularity including a concave portion of silicon dioxide and a plurality of convex portions of silicon dioxide; and making a first dissolution rate larger than a second dissolution rate to remove at least a part of the silicon dioxide at the convex portions and decrease a distance between a top surface of the silicon dioxide at the convex portions and a top surface of the silicon dioxide at the concave portion, the making being performed by changing equilibrium state of the treatment liquid at areas being in contact with the convex portions in a state in which the silicon dioxide film is brought into contact with the treatment liquid, the first dissolution rate being a dissolution rate of the silicon dioxide at the convex portions with respect to the treatment liquid, and the second dissolution rate being a dissolution rate of the silicon dioxide at the concave portion with respect to the treatment liquid, wherein the changing equilibrium state includes carrying out treatment of decreasing temperature of the convex portions by bringing a temperature controlling plate into contact with the convex portions, and the temperature controlling plate is capable of being cooled, and the treatment liquid substantially contains no abrasive grain.
地址 Tokyo JP