| 发明名称 | Magnetic shift register with pinning structure | ||
| 摘要 | A magnetic shift register includes a first supporting layer, a second supporting layer, a first pinning material layer, and at least one magnetic memory track. The first supporting layer has trenches on a first surface extending along a first direction. The second supporting layer is filled in the trenches, wherein the first support layer and the second support layer have at least a portion substantially equal in height. The first pinning material layer is disposed between the first supporting layer and the second supporting layer, wherein a plurality of end surfaces of the first pinning material layer are exposed on the first surface. The magnetic memory track extending along a second direction on the first surface is disposed over the first support layer, the first pinning material layer, and the second support layer, wherein the second direction is not the same or perpendicular to the first direction. | ||
| 申请公布号 | US9196379(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201113338285 | 申请日期 | 2011.12.28 |
| 申请人 | Industrial Technology Research Institute | 发明人 | Shen Kuei-Hung |
| 分类号 | H01L29/82;G11C19/08;G11C11/14;H01L21/00 | 主分类号 | H01L29/82 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A magnetic shift register, comprising: a first supporting layer having a first surface and a plurality of trenches on the first surface extending along a first direction; a second supporting layer, filled in the plurality of trenches, wherein the first supporting layer and the second supporting layer have at least a portion substantially equal in height; a first pinning material layer, disposed between the first supporting layer and the second supporting layer, wherein end surfaces of the first pinning material layer is exposed by the first surface, wherein a height of each of the end surfaces of the first pinning material layer is higher than a height of the first surface; and at least one magnetic memory track extending along a second direction on the first surface, disposed over the first support layer, the first pinning material layer, and the second support layer, wherein the second direction is not the same as the first direction, wherein portions of the at least one magnetic memory track respectively at the end surfaces of the first pinning material layer are protrudent. | ||
| 地址 | Hsinchu TW | ||