Operating resistive memory cell

摘要

A circuit that includes a current source and a current comparator is disclosed. The current source is connected to a resistive memory cell to generate a driving current thereto. The current comparator has a sensing node connected to the current source and the resistive memory cell to sense an injection current injected to the current comparator through the sensing node, wherein when a resistive state of the resistive memory cell switches such that the current comparator determines that an amount of the injection current increases to exceed or decreases to reach threshold value, the current comparator turns off the current source.

主权项

1. A circuit comprising:
a first diode-connected P-type metal-oxide-semiconductor (PMOS) transistor and a first diode-connected N-type metal-oxide-semiconductor (NMOS) transistor cascade-connected at a sensing node, wherein the sensing node senses an injection current injected through the sensing node from or to an external circuit; and a second P-type metal-oxide-semiconductor (PMOS) transistor and a second N-type metal-oxide-semiconductor (NMOS) transistor cascade-connected at an output node, wherein the gates of the first diode-connected P-type metal-oxide-semiconductor (PMOS) transistor and the second P-type metal-oxide-semiconductor (PMOS) transistor are connected and the gates of the first diode-connected N-type metal-oxide-semiconductor (NMOS) transistor and the second N-type metal-oxide-semiconductor (NMOS) transistor are connected; wherein when an amount of the injection current increases to exceed or decreases to reach a threshold value, a voltage state of a voltage of the output node switches.