Magnetic memory element and magnetic memory device

摘要

There is disclosed a memory element including a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side.

主权项

1. A memory element, comprising:
a memory layer configured to store an information associated with a magnetization state of a magnetic material; a magnetization-fixed layer that has a magnetization serving as a reference of the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic material, wherein a spin-polarized electron is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side, wherein the magnetic material includes Co, Fe, and B, and the composition ratio of Co, Fe and B satisfy the following equation;
(Cox—Fey)100-z—Bz, wherein 0≦Cox≦40, 60≦Fey≦100, 0