| 发明名称 | Semiconductor memory apparatus | ||
| 摘要 | A semiconductor memory apparatus may include a program voltage generation block configured to generate a program voltage in response to program codes; a precharge voltage generation block configured to generate a precharge voltage in response to the program codes and addresses; and a main bit line configured to be applied with the program voltage and the precharge voltage. | ||
| 申请公布号 | US9196326(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201414249897 | 申请日期 | 2014.04.10 |
| 申请人 | SK Hynix Inc. | 发明人 | Yoon Jung Hyuk;Tak Jung Mi |
| 分类号 | G11C7/12;G11C5/14;G11C13/00 | 主分类号 | G11C7/12 |
| 代理机构 | William Park & Associates Ltd. | 代理人 | William Park & Associates Ltd. |
| 主权项 | 1. A semiconductor memory apparatus comprising: a program voltage generation block configured to generate a program voltage in response to program codes; a precharge voltage generation block configured to generate a precharge voltage in response to the program codes and addresses; and a main bit line configured to be applied with the program voltage and the precharge voltage, wherein the precharge voltage generation block decreases a level of the precharge voltage in response to the addresses when a memory cell close to the main bit line is selected in response to the addresses than when the memory cell far from the main bit line is selected in response to the addresses. | ||
| 地址 | Gyeonggi-do KR | ||