发明名称 Page replacement method and memory system using the same
摘要 A memory system includes a central processing unit (CPU), a nonvolatile memory electrically coupled to the CPU and a main memory, which is configured to swap an incoming code page for a target code page therein, in response to a first command issued by the CPU. The main memory can be configured to swap the target code page in the main memory to the nonvolatile memory in the event a page capacity of the main memory is at a threshold capacity. The CPU may also be configured to perform a frequency of use analysis on the target code page to determine whether the target code page is to be swapped to the nonvolatile memory or discarded. The incoming code page may be provided by a disk drive storage device and the main memory may be a volatile memory.
申请公布号 US9195579(B2) 申请公布日期 2015.11.24
申请号 US201313754161 申请日期 2013.01.30
申请人 Samsung Electronics Co., Ltd.;Research & Business Foundation, Sungkyunkwan University 发明人 Kwon Oh-Seong;Han Hwansoo;Lim Sun-Young;Kim Seonggun
分类号 G06F12/00;G06F12/02;G06F12/08;G06F12/12 主分类号 G06F12/00
代理机构 Myers Bigel Sibley & Sajovec, PA 代理人 Myers Bigel Sibley & Sajovec, PA
主权项 1. A memory system, comprising: a central processing unit (CPU); a nonvolatile flash memory electrically coupled in the memory system to communicate with said CPU; and a main memory configured to swap an incoming code page read from a nonvolatile non-flash memory for a target code page therein, in response to a first command issued by said CPU; wherein said main memory is configured to swap the target code page in said main memory to said nonvolatile flash memory in the event a page capacity of said main memory is at a threshold capacity; and wherein said main memory includes a page table configured to maintain refault bit values therein, which indicate for each of a plurality of code pages stored in said main memory how many times the corresponding code pages have been discarded from said main memory without being written into said nonvolatile flash memory.
地址 KR