Methods of managing metal density in dicing channel and related integrated circuit structures

摘要

Various embodiments include managing metal densities in kerf sections of an integrated circuit (IC) wafer. In some embodiments, a method includes: forming an integrated circuit (IC) wafer including a wafer kerf region, the wafer kerf region having a metal density of less than approximately 0.5 percent relative to a total density of the wafer kerf region.

主权项

1. A method comprising:
forming an integrated circuit (IC) wafer including a wafer kerf region, the wafer kerf region having a metal density of less than approximately 0.5 percent relative to a total density of the wafer kerf region, the forming of the IC wafer including: forming a wafer substrate; forming a process region over the wafer substrate, the process region containing the metal density of less than approximately 0.5 percent relative to the total density of the wafer kerf region; forming at least one copper wire within the process region, the at least one copper wire having a thickness of at least approximately 3 microns as measured along an axis of dicing of the wafer kerf region; and forming at least one aluminum wire within the process region, the at least one aluminum wire having a thickness of at least 4 microns as measured along the axis of dicing of the wafer kerf region.