发明名称 CHIP LEVEL HEAT DISSIPATION USING SILICON
摘要 PROBLEM TO BE SOLVED: To provide techniques relating to cooling of semiconductor devices.SOLUTION: A semiconductor device includes a semiconductor chip having a first silicon substrate with opposing first and second surfaces, a semiconductor device formed at or in the first surface, a plurality of first contact pads formed at the first surface which are electrically coupled to the semiconductor device, a layer of thermally conductive material on the second surface, and a plurality of first vias formed partially through the layer of thermally conductive material.
申请公布号 JP2015211221(A) 申请公布日期 2015.11.24
申请号 JP20150088186 申请日期 2015.04.23
申请人 OPTIZ INC 发明人 VAGE OGANESIAN
分类号 H01L23/36 主分类号 H01L23/36
代理机构 代理人
主权项
地址