| 摘要 |
<p>The object of the present invention is to provide a method for reducing defects, which are incurred on a surface of and inside a single-crystal silicon layer by a bonding method, by a treatment at a relatively low temperature over a relatively short duration. More specifically, the present invention relates to a method for manufacturing an SOI wafer, the method comprising the steps of: forming a single-crystal silicon layer by a bonding method on a handle substrate selected from a material having a heat-resistant temperature of 800°C or above to obtain a bonded substrate; depositing amorphous silicon on the single-crystal silicon layer of the bonded substrate; and heating the bonded substrate after the depositing at 800°C or above.</p> |
