Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures

摘要

A method of forming a semiconductor device that includes forming an at least partially relaxed semiconductor material, and forming a plurality of fin trenches in the partially relaxed semiconductor material. At least a portion of the plurality of fin trenches is filled with a first strained semiconductor material that is formed using epitaxial deposition. A remaining portion of the at least partially relaxed semiconductor material is removed to provide a plurality of fin structure of the first strained semiconductor material.

主权项

1. A method of forming a semiconductor device comprising:
forming an at least partially relaxed semiconductor material; forming a plurality of fin trenches in the partially relaxed semiconductor material; filling at least a portion of the plurality of fin trenches with a strained semiconductor material formed using epitaxial deposition; removing a remaining portion of the at least partially relaxed semiconductor material that provides sidewalls of the fin trenches to provide a plurality of fin structures of the strained semiconductor material; and forming a gate structure on a channel portion of the plurality of fin structures, and source and drain regions on opposing sides of the channel portion of the plurality of fin structures.