Lithography masks, systems, and manufacturing methods

摘要

Lithography masks, lithography systems, methods of manufacturing lithography masks, methods of altering material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a lithography mask includes a first pattern for at least one material layer of at least one die, the first pattern being oriented in a first position. The lithography mask includes a second pattern for at least one material layer of the at least one die, the second pattern being oriented in a second position. The second position is different than the first position.

主权项

1. A lithography system comprising:
a support for a lithography mask, the lithography mask comprising:
a first pattern for a first material layer, the first pattern being oriented in a first position;a second pattern for a second material layer, the second pattern being oriented in a second position, the second position being different than the first position; anda first set of alignment marks within the first pattern and a second set of alignment marks within the second pattern; a lens system proximate the support for the lithography mask, an energy source proximate the lens system; and a support for a semiconductor wafer proximate the support for the lithography mask.