| 发明名称 | Magnetic storage element and magnetic memory | ||
| 摘要 | A magnetic storage element including a recording layer and a heat generator. The recording layer has a magnetization direction that is configured to change via spin injection so that information can be recorded. The heat generator is positioned to heat the recording layer. The recording layer comprises (i) cobalt and iron and (ii) a non-magnetic element or a non-magnetic element and an oxide. | ||
| 申请公布号 | US9196824(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201414256413 | 申请日期 | 2014.04.18 |
| 申请人 | SONY CORPORATION | 发明人 | Yamane Kuzutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Uchida Hiroyuki |
| 分类号 | H01L29/82;H01L43/02;H01L43/08;H01L43/10;G11C11/16;H01L27/22 | 主分类号 | H01L29/82 |
| 代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
| 主权项 | 1. A magnetic storage element comprising: a recording layer with a magnetization direction that changes via spin injection; and a heat generator positioned to heat the recording layer, wherein, the recording layer comprises (i) cobalt and iron and (ii) a non-magnetic element or a non-magnetic element and an oxide, wherein: a magnetization of the recording layer at 150° C. is at least 50% of its magnetization at room temperature, and the magnetization of the recording layer at a temperature in a range from 150° C. to 200° C. is in a range of 10% to 80% of its magnetization at the room temperature. | ||
| 地址 | Tokyo JP | ||