Non-volatile memory apparatus and erasing method thereof

摘要

The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.

主权项

1. A non-volatile memory apparatus, comprising:
a plurality of first memory sectors, disposed in a first well, wherein, each of the first memory sectors comprises a plurality of memory cells for respectively receiving a plurality of control line signals; and a control voltage provider, coupled to the first memory sectors for providing the control line signals to the memory cells of each of the first memory sectors, wherein, when an erasing operation is operated, one of the first memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different, wherein a voltage level applied on the first well equals to the voltage level of the un-erase control voltage when the erasing operation is operated.