Nonvolatile memory device having split ground selection line structures

摘要

A nonvolatile memory device includes a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.

主权项

1. A nonvolatile memory device, comprising:
a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure; a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other; a second memory block disposed in the 3D structure and having memory cells selected by a third ground selection line and fourth ground selection line, wherein the third and fourth ground selection lines are electrically separated from each other; and a first pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first ground selection line of the first memory block and the third ground selection line of the second memory block in response to a block selection signal.