| 发明名称 | Magnetic random access memory having increased on/off ratio and methods of manufacturing and operating the same | ||
| 摘要 | A magnetic random access memory (MRAM), and methods of manufacturing and operating the MRAM, include a switching element and a storage node connected to the switching element, and a magnetic node configured to simultaneously store two opposite bits. | ||
| 申请公布号 | US9196340(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201314080108 | 申请日期 | 2013.11.14 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Kim Ho-jung;Choi Hyun-sik |
| 分类号 | G11C11/00;G11C11/16;H01L43/08;H01L27/22;G11C11/15;H01L43/12 | 主分类号 | G11C11/00 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A magnetic random access memory (MRAM), comprising: a switching element; a storage node connected to the switching element, the storage node including a first magnetic tunnel junction (MTJ) and a second magnetic tunnel junction (MTJ); two bit lines, wherein the first MTJ and the second MTJ are between the two bit lines, and each of the first MTJ and the second MTJ are connected to a corresponding one of the two bit lines; and a conductive pad layer between the first MTJ and the second MTJ, wherein the first MTJ, the conductive pad layer, and the second MTJ are sequentially stacked between the two bit lines, and the first MTJ and the second MTJ simultaneously store two opposite bits. | ||
| 地址 | Gyeonggi-Do KR | ||