BONDED SOI WAFER MANUFACTURING METHOD AND BONDED SOI WAFER

摘要

PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method which can deposit a polycrystalline silicon layer so as not to advance single crystallization even when undergoing a heat treatment step in an SOI wafer manufacturing step or a heat treatment step in a device manufacturing step.SOLUTION: A bonded SOI wafer manufacturing method comprises: a step of depositing a polycrystalline silicon layer on a base wafer on a bonding surface side; a step of polishing a surface of the polycrystalline silicon layer; a step of forming an insulation film on a bonding surface of a bonding wafer; a step of bonding the polished surface of the polycrystalline silicon layer of the base wafer and the bonding wafer via the insulation film; and a step of thinning the bonded bonding wafer to form an SOI layer, in which a wafer having resistivity of 100 &OHgr;cm and over is used as the base wafer. The manufacturing method further comprises a step of preliminarily forming an oxide film on a surface of the base wafer on which the polycrystalline silicon layer is to be deposited. The deposition of the polycrystalline silicon layer is performed at a temperature of 900°C and over.