SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve a writing speed of a nonvolatile memory.SOLUTION: A nonvolatile memory includes a charge injection discharge part which has: an active region L2 having an upper surface US2, a side wall SS2 and a shoulder part S1 for linking the upper surface US2 and the side wall SS2; a conductive film 20 which covers the upper surface US2 and the shoulder part S1 of the active region L2 and a capacitance insulation film 10d provided between the conductive film 20 and the active region L2. The active region L2 has a projection PJ1 composed of a first depressed portion DP1 corresponding to the upper surface US2 and a second depressed portion DP2 corresponding to the side wall SS2, at the shoulder part S1.