| 摘要 |
Presented is a bipolar transistor capable of improving a current amplification rate while improving voltage resistance. A bipolar transistor is provided with a p-type emitter region, a p-type collector region, an n-type base region located between the emitter region and the collector region, a p-type first embedded region located below the base region, and an n-type region having a lower n-type impurity concentration than the base region. The base region is provided with a first high-concentration region and a low-concentration region positioned above the first embedded region, and a second high-concentration region positioned on a collector region side than the low-concentration region, wherein the second high-concentration region has a higher n-type impurity concentration than the low-concentration region. |
