| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for producing polycrystalline silicon, in which a silicon core wire is prevented from being damaged when energized initially and a destruction trouble of the silicon core wire is prevented in the initial stage of a reaction.SOLUTION: A bypass circuit 17 is arranged between paired silicon core wires 12 and a switch 16 is connected to the side of a B terminal so that the paired silicon core wires 12 can be connected to a power source 15 in series. The switch 16 is changed over to the side of an A terminal so that only one silicon core wire (on the left side) can be connected to the power source 15. Firstly, the paired silicon core wires are heated to 200-400°C by means of radiation R from a carbon heater 13. Secondly, only the left-side silicon core wire 12 is kept in an energized state (semi-energized state) and an initial voltage is applied to the left-side silicon core wire 12 so that the left-side silicon core wire becomes a self-heating state and the temperature thereof is raised and the resistivity thereof is lowered. Thirdly, the left-side silicon core wire is connected to the right-side silicon core wire in series and the paired silicon core wires are energized (in a totally energized state).</p> |
