| 摘要 |
<p>The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, andto improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from t he substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. Systemto practice the exemplary method described above are also provided.</p> |
