发明名称 Semiconductor device
摘要 The semiconductor device includes: a first die configured to include a first input pad and a first output pad; and a second die configured to include a second input pad and a second output pad. The second die corrects a level of an output voltage in response to a feedback reference voltage applied from the first output pad to the second input pad.
申请公布号 US9197209(B2) 申请公布日期 2015.11.24
申请号 US201414307617 申请日期 2014.06.18
申请人 SK Hynix Inc. 发明人 Cho Oung Sic;Lee Sang Eun
分类号 H03K19/003;H03K17/16;H03K19/00;H03K3/012;G05F1/652 主分类号 H03K19/003
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A semiconductor device comprising: a first die configured to include a first input pad and a first output pad; and a second die configured to include a second input pad and a second output pad, wherein the second die corrects a level of an output voltage in response to a feedback reference voltage applied from the first output pad to the second input pad, wherein the correction of the output voltage is performed until the output voltage level of the first die is matched to the output voltage level of the second die.
地址 Gyeonggi-do KR