Method for manufacturing piezoelectric device

摘要

An ion implantation layer is formed in a piezoelectric single crystal substrate by implanting hydrogen ions. A lower electrode is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer is formed. A sacrificial layer is formed on the surface of the piezoelectric single crystal substrate at a side at which the ion implantation layer and the lower electrode are formed. The formation of the sacrificial layer is performed by direct formation thereof on the surface of the piezoelectric single crystal substrate, for example, by sputtering or coating. A support layer is formed on the piezoelectric single crystal substrate on which the sacrificial layer is formed, and after the surface of the support layer is planarized, a support base material is bonded thereto.

主权项

1. A method for manufacturing a piezoelectric device including a piezoelectric thin film and a support member supporting the piezoelectric thin film, comprising:
an ion implantation step of forming an ion implantation layer by implanting ions into a piezoelectric substrate; a sacrificial layer formation step of forming a sacrificial layer on the surface of the piezoelectric substrate at an ion implantation layer side of the sacrificial layer; a support member formation step of forming the support member on the surface of the piezoelectric substrate at the ion implantation layer side; a peeling step of forming the piezoelectric thin film by peeling a portion of the piezoelectric substrate in which the ion implantation layer is formed; and a sacrificial layer removal step of removing the sacrificial layer.