Post-fabrication self-aligned initialization of integrated devices

摘要

Defining an active region of a phase change memory (PCM) cell including depositing a first layer of material having a first chemical composition. A second layer of material having a second chemical composition is deposited on top of the first layer of material. An electrical current pulse is applied to locally heat a region of the first layer of material and the second layer of material to cause at least one of an inter-diffusion and a liquid mixing of the first layer of material and the second layer of material. This results in in the PCM cell containing a self-aligned region that includes a phase change material that is a mixture of the first chemical composition and the second chemical composition.

主权项

1. A method of defining an active region of a phase change memory (PCM) cell comprising:
depositing a first layer of material having a first chemical composition, the depositing on top of a first conductive electrode region that forms a bit line and on top of a second conductive electrode region that includes a u-trench; depositing a second layer of material having a second chemical composition on top of the first layer of material; depositing a resist layer on top of the second layer of material; and applying an electrical current pulse to locally heat a region of the first layer of material and the second layer of material to cause at least one of an inter-diffusion and a liquid mixing of the first layer of material and the second layer of material, resulting in the PCM cell comprising a self-aligned region comprising a phase change material that is a mixture of the first chemical composition and the second chemical composition and a portion of the resist layer being sensitized; wherein the portion of the resist layer that is sensitized covers the self-aligned region of the PCM cell.