Non-volatile memory devices having dual heater configurations and methods of fabricating the same

摘要

A non-volatile memory device includes a data storage structure coupled between first and second conductive lines of the memory device. The data storage structure includes a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked. At least one sidewall surface of the data storage pattern is coplanar with a sidewall surface of the upper heater element thereabove and a sidewall surface of the lower heater element therebelow. Related fabrication methods are also discussed.

主权项

1. A non-volatile memory device comprising:
a data storage structure coupled between first and second conductive lines of the memory device, the data storage structure comprising a conductive lower heater element, a data storage pattern, and a conductive upper heater element sequentially stacked, wherein the data storage pattern includes a sidewall surface that is coplanar with a sidewall surface of the upper heater element and a sidewall surface of the lower heater element, wherein a surface of the lower heater element contacting the data storage pattern includes a protrusion along an edge thereof, and wherein a surface of the data storage pattern contacting the upper heater element includes a protrusion along an edge thereof.