发明名称 Semiconductor device, radio communication terminal, and method for controlling semiconductor device
摘要 A semiconductor device according to the present invention includes a PLL circuit, in which the PLL circuit includes: a phase difference detection unit that detects a phase difference between a reference signal and a division signal; a filter that outputs a control signal according to a detection result of the phase difference detection unit; an oscillation unit that outputs an oscillation signal of a frequency according to the control signal; a division unit that divides the oscillation signal to output it as the division signal; a noise intensity detection unit that detects a noise intensity of a predetermined frequency component included in the control signal; and a phase difference adjustment unit that adjusts a phase difference between the reference signal and the division signal based on the noise intensity detected by the noise intensity detection unit.
申请公布号 US9197276(B2) 申请公布日期 2015.11.24
申请号 US201314083629 申请日期 2013.11.19
申请人 Renesas Electronics Corporation 发明人 Endo Ryo
分类号 H04B7/00;H04B1/40;H03L7/085;H03L7/093;H03L7/099;H03L7/193 主分类号 H04B7/00
代理机构 Miles & Stockbridge P.C. 代理人 Miles & Stockbridge P.C.
主权项 1. A semiconductor device comprising a PLL circuit, wherein the PLL circuit includes: (a) a phase difference detection unit that detects a phase difference between a reference signal and a division signal; (b) a filter that outputs a control signal according to a detection result of the phase difference detection unit; (c) an oscillation unit that outputs an oscillation signal of a frequency according to the control signal; (d) a division unit that divides the oscillation signal to output it as the division signal; (e) a noise intensity detection unit that detects a noise intensity of a predetermined frequency component included in the control signal; and (f) a phase difference adjustment unit that adjusts a phase difference between the reference signal and the division signal based on the noise intensity detected by the noise intensity detection unit.
地址 Tokyo JP