发明名称 Solar cell
摘要 Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type.
申请公布号 US9196780(B2) 申请公布日期 2015.11.24
申请号 US201414582505 申请日期 2014.12.24
申请人 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. 发明人 Kirihata Yutaka;Nakasu Masato;Sotani Naoya
分类号 H01L31/07;H01L31/075;H01L31/0352;H01L31/068;H01L31/0747;H01L31/18 主分类号 H01L31/07
代理机构 MOTS LAW, PLLC 代理人 Motsenboker Marvin A.;MOTS LAW, PLLC
主权项 1. A solar cell comprising: a substrate; a first amorphous semiconductor layer arranged at a first region of the substrate and being of a first conductivity type; a second amorphous semiconductor layer arranged at a second region of the substrate and being of a second conductivity type; a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer; a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the second conductivity type; a first crystalline semiconductor layer arranged between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the first conductivity type; and a second crystalline semiconductor layer arranged between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the second conductivity type.
地址 Osaka JP