发明名称 |
Solar cell |
摘要 |
Disclosed is a solar cell that comprises a substrate made of a semiconductor material, a first amorphous semiconductor layer placed on one region of the substrate and being of one conductivity type, a second amorphous semiconductor layer placed on another region of the substrate and being of another conductivity type, a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer, a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the other conductivity type, a first crystalline semiconductor layer placed between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the one conductivity type, and a second crystalline semiconductor layer placed between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the other conductivity type. |
申请公布号 |
US9196780(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201414582505 |
申请日期 |
2014.12.24 |
申请人 |
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. |
发明人 |
Kirihata Yutaka;Nakasu Masato;Sotani Naoya |
分类号 |
H01L31/07;H01L31/075;H01L31/0352;H01L31/068;H01L31/0747;H01L31/18 |
主分类号 |
H01L31/07 |
代理机构 |
MOTS LAW, PLLC |
代理人 |
Motsenboker Marvin A.;MOTS LAW, PLLC |
主权项 |
1. A solar cell comprising:
a substrate; a first amorphous semiconductor layer arranged at a first region of the substrate and being of a first conductivity type; a second amorphous semiconductor layer arranged at a second region of the substrate and being of a second conductivity type; a substantially intrinsic i-type amorphous semiconductor layer provided above the first amorphous semiconductor layer; a third amorphous semiconductor layer provided on the i-type amorphous semiconductor layer and being of the second conductivity type; a first crystalline semiconductor layer arranged between the first amorphous semiconductor layer and the i-type amorphous semiconductor layer and being of the first conductivity type; and a second crystalline semiconductor layer arranged between the first crystalline semiconductor layer and the i-type amorphous semiconductor layer and being of the second conductivity type. |
地址 |
Osaka JP |