| 发明名称 | Semiconductor bonding structure | ||
| 摘要 | The disclosure relates to a semiconductor bonding structure and process and a semiconductor chip. The semiconductor bonding structure includes a first pillar, a first interface, an intermediate area, a second interface and a second pillar in sequence. The first pillar, the second pillar and the intermediate area include a first metal. The first interface and the second interface include the first metal and an oxide of a second metal. The content percentage of the first metal in the first interface and the second interface is less than that of the first metal in the intermediate area. | ||
| 申请公布号 | US9196595(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201414192029 | 申请日期 | 2014.02.27 |
| 申请人 | Advanced Semiconductor Engineering, Inc. | 发明人 | Chen Kuo-Hua;Lin Tzu-Hua;Chen Kuan-Neng;Huang Yan-Pin |
| 分类号 | H01L23/00;H01L21/56;H01L25/065;H01L25/00;H01L23/498;H01L23/31 | 主分类号 | H01L23/00 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP ;Liu Cliff Z.;Murch Angela D. |
| 主权项 | 1. A semiconductor bonding structure, comprising: a first pillar comprising a first metal; a second pillar comprising the first metal; an intermediate area, located between the first pillar and the second pillar, and comprising the first metal; a first interface, located between the first pillar and the intermediate area, and comprising the first metal and an oxide of a second metal, wherein the content percentage of the first metal in the first interface is less than that of the first metal in the intermediate area; and a second interface, located between the second pillar and the intermediate area, and comprising the first metal and the oxide of the second metal, wherein the content percentage of the first metal in the second interface is less than that of the first metal in the intermediate area. | ||
| 地址 | Kaohsiung TW | ||