FinFET with buried insulator layer and method for forming

摘要

A fin structure suitable for a FinFET and having a buried insulator layer is disclosed. In an exemplary embodiment, a semiconductor device comprises a substrate with a first semiconductor material and having a fin structure formed thereupon. The fin structure includes a lower region proximate to the substrate, a second semiconductor material disposed on the lower region, a third semiconductor material disposed on the second semiconductor material, and an insulating material selectively disposed on the second semiconductor material such that the insulating material electrically isolates a channel region of the fin structure and further such that the insulating material exerts a strain on the channel region. The semiconductor device further comprises an isolation feature disposed adjacent to the fin structure.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
receiving a substrate including a first semiconductor and having a fin structure disposed on the substrate, wherein the fin structure comprises: a lower region, a second semiconductor formed on the lower region; and a third semiconductor formed on the second semiconductor; performing a selective oxidation in order to selectively form a semiconductor oxide on a portion of the second semiconductor underlying a channel region of the fin structure, wherein the performing of the selective oxidation forms the semiconductor oxide to exert a strain on the channel region; and forming a semiconductor device on the fin structure, wherein the performing of the selective oxidation includes:
forming a dummy gate on the substrate;forming a protective layer around the dummy gate;removing the dummy gate; andforming a sacrificial oxide layer on the substrate, and wherein the sacrificial oxide layer is formed in a void left by the removing of the dummy gate.