发明名称 |
Solution-based synthesis of CsSnI<sub>3 </sub> |
摘要 |
This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI3) films. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices. |
申请公布号 |
US9196482(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201213491562 |
申请日期 |
2012.06.07 |
申请人 |
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发明人 |
Shum Kai;Chen Zhuo;Ren Yuhang |
分类号 |
A01B11/00;H01L21/02;C04B35/515;C04B35/626;C03C17/22;H01L31/032;H01L31/0392;H01L31/18 |
主分类号 |
A01B11/00 |
代理机构 |
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代理人 |
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主权项 |
1. A process of forming CsSnI3 film on a substrate, comprising steps of:
(a)providing a substrate; (b)providing homogeneous CsSnI3 solution; (c)drop-coating the homogeneous CsSnI3 solution onto the substrate; (d)heating the substrate after step (c) to remove solvent in the homogeneous CsSnI3solution until the substrate is dry; and (e)forming the CsSnI3film on the substrate. |
地址 |
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