| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical device in which damages of an active layer, etc. can be suppressed even when a reverse voltage is applied between a p-type electrode and an n-type electrode.SOLUTION: A semiconductor optical device has a p-type electrode, an n-type electrode, a discharge electrode which is electrically connected to the n-type electrode through a conductor, an active layer through which forward current flows to emit light from the end face thereof under an operation state that a forward voltage is applied between the p-type electrode and the n-type electrode, and a resistor which is electrically connected between the p-type electrode and the discharge electrode. When the forward voltage is applied, the electrical resistance between the p-type electrode and the n-type electrode is smaller than the electrical resistance of the resistor, and when a reverse voltage in the opposite direction to the forward voltage is applied, the electrical resistance between the p-type electrode and the n-type electrode is larger than the electrical resistance of the resistor. |
