| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving element that allows reduction in an optical influence on incident light even in a structure in which a resin film is buried between a light-receiving part and a mesa part. <P>SOLUTION: A semiconductor light-receiving element of the present invention comprises: a light-receiving part 16 provided on an n-type InP substrate 10 and composed of a semiconductor structure having a top surface and side surfaces; a dummy mesa part 20a (an electrode connection part) provided adjacent to the light-receiving part 16 on the n-type InP substrate 10 and composed of the semiconductor structure having a top surface and side surfaces; a first insulating film 26 covering the side surfaces of the light-receiving part 16, the side surfaces of the dummy mesa part 20a, and the n-type InP substrate 10 between the light-receiving part 16 and the dummy mesa part 20a; a resin film 28 filling between the light-receiving part 16 and the dummy mesa part 20a on the first insulating film 26; and a second insulating film 30 directly contacting the top surface of the light-receiving part 16 and covering the resin film 28. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
