Fuse structure for high integrated semiconductor device

摘要

The present invention provides a technology capable of improving an operation reliability of a semiconductor device. Particularly, a fuse material which constitutes the copper can be prevented from migrating being locked in the recesses or the grooves after a blowing process. A semiconductor device includes an insulating layer including a concave-convex-shaped upper part; and a fuse formed on the insulating layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a plurality of first type recesses by etching a first insulating layer provided over a substrate; depositing a second insulating layer over the first insulating layer and the plurality of first type recesses; forming a second type recess by etching the second insulating layer without etching the first insulating layer, thereby exposing the plurality of first type recesses; and after forming the second type recess, forming a fuse in the first and second insulating layers by filling the plurality of first type recesses and the second type recess with a conductive material.