| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | A semiconductor device includes: a layer of a first conductivity type; a well of a second conductivity type on the layer of the first conductivity type in an active region; and a flat RESURF layer of the second conductivity type on the layer of the first conductivity type on an outer circumference of the well as a termination structure. The RESURF layer includes a low concentration layer arranged at an inner end on the well side and an outer end on the outer circumferential side, and a high concentration layer arranged between the inner end and the outer end and having a higher impurity concentration than the low concentration layer. | ||
| 申请公布号 | US9196488(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201414150500 | 申请日期 | 2014.01.08 |
| 申请人 | Mitsubishi Electric Corporation | 发明人 | Takahashi Tetsuo |
| 分类号 | H01L23/58;H01L21/425;H01L21/265;H01L29/06;H01L21/266;H01L29/40;H01L29/739 | 主分类号 | H01L23/58 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A semiconductor device comprising: a substrate including a layer of a first conductivity type; a well of a second conductivity type on the layer of the first conductivity type in an active region in a center region of the substrate; and a flat RESURF layer of the second conductivity type on the layer of the first conductivity type on an outer circumference of the well as a termination structure, wherein the RESURF layer includes a low concentration layer arranged at an inner end on the well side and an outer end on the outer circumferential side, and a high concentration layer arranged between the inner end and the outer end and having a higher impurity concentration than the low concentration layer, and the RESURF layer surrounds the active region. | ||
| 地址 | Tokyo JP | ||