发明名称 |
Processing liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same |
摘要 |
There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure, contains a phosphate ester and/or a polyoxyalkylene ether phosphate ester, and the method for producing a fine metal structure, uses the same. |
申请公布号 |
US9196472(B2) |
申请公布日期 |
2015.11.24 |
申请号 |
US201013388462 |
申请日期 |
2010.07.21 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
Ohto Masaru;Matsunaga Hiroshi;Yamada Kenji |
分类号 |
H01L21/306;B81C1/00;C07F9/09;C09K3/00;H01L21/02 |
主分类号 |
H01L21/306 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A processing liquid for suppressing pattern collapse of a fine metal structure, consisting essentially of at least one ester represented by formula (1) or formula (2):wherein
R1 represents an alkyl group having 2 to 24 carbon atoms or an alkenyl group having 2 to 24 carbon atoms; and R2 represents an alkanediyl group or an alkenediyl group having 2 to 6 carbon atoms, in which plural groups represented by R1 or R2 may be the same as or different from each other; and n is 0, and wherein a content of the at least one ester is 10 ppm to 1000 ppm by mass, based on a mass of the processing liquid. |
地址 |
Tokyo JP |