发明名称 Plasma processing apparatus and plasma processing method
摘要 A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.
申请公布号 US9196460(B2) 申请公布日期 2015.11.24
申请号 US200912997211 申请日期 2009.06.03
申请人 TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY 发明人 Hirayama Masaki;Ohmi Tadahiro
分类号 H01J37/32 主分类号 H01J37/32
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A plasma processing apparatus comprising: a processing container which is formed of metal and receives a substrate that is plasma-processed; an electromagnetic wave source which supplies electromagnetic waves required to excite the plasma inside of the processing container; one, two, or more dielectric plates which are disposed on a lower surface of a lid of the processing container, are partially exposed to inside of the processing container, and transmit the electromagnetic wave supplied from the electromagnetic wave source to inside of the processing container; and a metal electrode that is provided on a lower surface of the dielectric plate; wherein the electromagnetic wave transmitted from the dielectric plates is propagated along a metal surface exposed to inside of the processing container, the metal surface comprising a lower surface of the metal electrode and a lower surface of the lid where the dielectric plate is not disposed, wherein the plasma processing apparatus further comprises: a gas supply source which supplies a desired gas; a first gas discharging unit which discharge the gas supplied from the gas supply source to inside of the processing container; and a gas flow passage which introduce the gas supplied from the gas supply source to the first gas discharging unit.
地址 JP