Semiconductor storage device

摘要

A semiconductor storage device according to the present embodiment includes a memory cell array including a plurality of memory cells. A plurality of word lines are electrically connected to control gates of the memory cells. A plurality of bit lines are electrically connected to one end of a current path of the memory cells. A sense amplifier part detects data stored in the selected memory cells. A power supply part converts an external power supply voltage to an internal power supply voltage and supplies the internal power supply voltage to the sense amplifier part. A power supply wire extends above the memory cell array and is provided to range from the power supply part to the sense amplifier part.

主权项

1. A semiconductor storage device comprising:
a memory cell array comprising a plurality of memory cells; a plurality of word lines electrically connected to control gates of the memory cells; a plurality of bit lines electrically connected to one end of a current path of the memory cells; a sense amplifier part configured to detect data stored in the selected memory cells; a power supply part configured to convert an external power supply voltage to an internal power supply voltage and to supply the internal power supply voltage to the sense amplifier part, the memory cell array being disposed between the sense amplifier and the power supply part; a power supply wire extending above a first area in the memory cell array, the first area being between the power supply part and the sense amplifier part; and a discharge part electrically connected to the power supply wire and configured to discharge the power supply wire when a voltage of the power supply wire exceeds a first voltage.