| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device capable of efficiently processing entire of a desired processing area of a base material in a short time by stably and effectively generating plasma when performing uniformly high temperature heat treatment in a short time in the vicinity of the surface of the base material, or when performing low temperature plasma processing on the base material by exposing the base material to a plasma of reactant gas or a plasma and reactant gas flow at time.SOLUTION: In an inductively-coupled plasma torch unit T, a solenoid coil 3 is disposed in the vicinity of a first quartz block 4 and a second quartz block 5 and a space 7 inside of a long chamber has a cylindrical shape. A plasma P generated in the space 7 inside of the long chamber is ejected to a base material 2 from a plasma exhaust nozzle 8 which is a slit opening in the long chamber. The base material 2 is processed while performing a relative movement between the long chamber and a base material loading table 1 in a direction perpendicular to a longitudinal direction of the plasma exhaust nozzle 8.</p> |
