| 发明名称 | Semiconductor laser device and manufacturing method thereof | ||
| 摘要 | A semiconductor laser device includes an n-type clad layer, a first p-type clad layer and a ridge stripe. The device also includes an active layer interposed between the n-type clad layer and the first p-type clad layer, and a current-blocking layer formed on side surfaces of the ridge stripe. The ridge stripe of the device includes a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer. The ridge stripe is formed such that a first ridge width as the width of a surface of the second p-type clad layer exists on the same side as the first p-type clad layer and a second ridge width as the width of a surface of the second p-type clad layer exists on the opposite side from the first p-type clad layer. | ||
| 申请公布号 | US9197035(B2) | 申请公布日期 | 2015.11.24 |
| 申请号 | US201414558797 | 申请日期 | 2014.12.03 |
| 申请人 | ROHM CO., LTD. | 发明人 | Nishioka Yoshito;Mugino Yoichi;Noma Tsuguki |
| 分类号 | H01S5/343;B82Y20/00;H01S5/34;G11B5/00;H01S5/16;H01S5/22;H01S5/32 | 主分类号 | H01S5/343 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A semiconductor laser device comprising: an n-type clad layer; a first p-type clad layer; a ridge stripe including a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first p-type clad layer from the n-type clad layer; an active layer interposed between the n-type clad layer and the first p-type clad layer; and a current-blocking layer formed on side surfaces of the ridge stripe, wherein a first ridge width of a surface of the second p-type clad layer existing on the same side as the first p-type clad layers is greater than or equal to 3.0 μm and less than or equal to 4.5 μm, and a second ridge width of a surface of the second p-type clad layer existing at the opposite side from the first p-type clad layer is greater than or equal to 2.0 μm, wherein the semiconductor laser device is a three-time-grown semiconductor laser device manufactured by forming a p-type contact layer after the current-blocking layer is formed, wherein the current-blocking layer is formed of an n-type (Alx4Ga(1−x4))0.51In0.49P (0≦x4≦1) layer that has a composition satisfying an inequality, 0.7≦x4≦0.9 and wherein the n-type clad layer, the first p-type clad layer and the second p-type clad layer are formed of a Alx1Ga (1−x1))0.51In0.49P layer that has a composition where x1>0.7. | ||
| 地址 | Kyoto JP | ||