发明名称 Pattern formation method
摘要 A pattern formation method includes a first step of forming a film having a flat surface on an uneven structure including a concave portion exhibiting liquid repellency and a convex portion exhibiting lyophilic properties so as to cover the concave portion and the convex portion; and a second step of forming a pattern by drying the film.
申请公布号 US9193180(B2) 申请公布日期 2015.11.24
申请号 US201414460261 申请日期 2014.08.14
申请人 FUJIFILM Corporation 发明人 Miyamoto Kimiaki
分类号 B41J11/00;H01L27/12;H01L29/786;H01L29/66 主分类号 B41J11/00
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A pattern formation method, comprising: a first step of forming a film having a flat surface on an uneven structure including a concave portion exhibiting liquid repellency and a convex portion exhibiting lyophilic properties so as to cover the concave portion and the convex portion; and a second step of forming a pattern by drying the film, wherein the film is formed with a coating liquid that satisfies: σ>0.153p1.947×δ−3.84×|aH|1.022 where surface tension is denoted by σ (N/m); film thickness is denoted by δ (m); pitch of irregularities made up of the concave portion exhibiting liquid repellency and the convex portion exhibiting lyophilic properties is denoted by p (m); and Hamaker constant is denoted by aH (J).
地址 Tokyo JP