NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

摘要

A nonvolatile memory device includes a memory cell array, an address decoder, an input/output circuit, a common source line (CSL) driver, and a control logic. The memory cell array is formed in the vertical direction to a substrate, and includes memory blocks which has strings connected between bit lines and the CSL. The CSL driver sets the common source line with a predetermined voltage. The common source line is charged or discharged by using the level of the common source line as a feedback signal.