发明名称 CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS
摘要 An IC device manufacturing process performs a planar recessing of a material, which initially changes a height across a substrate. The method comprises: a step for forming a polymer coating; a CMP step for forming a planar surface; and a plasma etching step for performing planar treatment of the polymer coating. The material can be recessed with the polymer coating, or subsequently can provide a mask with the recessed polymer coating. All of the material layers above a certain height are removed. A structure which is substantially lower than the certain height can be protected from contamination and left intact. A polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.
申请公布号 KR20150130240(A) 申请公布日期 2015.11.23
申请号 KR20150064547 申请日期 2015.05.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIU WEN KUEI;TSAI TENG CHUN;LIAO KAO FENG;YEN YU TING;SU YU CHUNG
分类号 H01L29/66;H01L21/02;H01L21/04;H01L21/304;H01L21/324 主分类号 H01L29/66
代理机构 代理人
主权项
地址