发明名称 |
CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS |
摘要 |
An IC device manufacturing process performs a planar recessing of a material, which initially changes a height across a substrate. The method comprises: a step for forming a polymer coating; a CMP step for forming a planar surface; and a plasma etching step for performing planar treatment of the polymer coating. The material can be recessed with the polymer coating, or subsequently can provide a mask with the recessed polymer coating. All of the material layers above a certain height are removed. A structure which is substantially lower than the certain height can be protected from contamination and left intact. A polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate. |
申请公布号 |
KR20150130240(A) |
申请公布日期 |
2015.11.23 |
申请号 |
KR20150064547 |
申请日期 |
2015.05.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU WEN KUEI;TSAI TENG CHUN;LIAO KAO FENG;YEN YU TING;SU YU CHUNG |
分类号 |
H01L29/66;H01L21/02;H01L21/04;H01L21/304;H01L21/324 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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