| 摘要 |
The present invention relates to an ingot growth apparatus and, more specifically, to a double crucible for CCZ which can reduce a convection generation of molten silicon and reduce an invasion type oxygen concentration in an ingot in a process of always constantly maintaining a level of the molten silicon by continuously inserting a silicon raw material for the amount that the molten silicon is consumed during an ingot growth. The double crucible used in the ingot growth apparatus of the present invention comprises: an external crucible having a storage space of which an upper portion is open, and where the fixed amount of the molten silicon is contained in the storage space; a hollow internal crucible of which upper and lower portions are open, arranged in the storage space to be separated from the floor of the external crucible for a certain height, and preventing the solid silicon raw material, supplied to a separated space between the outside and the inside of the external crucible, from being directly moved toward the storage space; and a plurality of rods extended from the internal crucible, connected to the external crucible, and supporting the internal crucible. The internal crucible is separated from the floor of the external crucible for a certain height. One part including a lower edge of the entire height is arranged to be dipped in a surface lower portion of the molten silicon contained in the storage space while the rest part including an upper edge is arranged in a surface upper portion of the molten silicon. |
