发明名称 |
PRODUCTION OF HETEROSTRUCTURE FOR TRANSLUCENT PHOTOCATHODE |
摘要 |
FIELD: physics.SUBSTANCE: claimed heterostructure for translucent photocathode of Ga arsenide by MOS-hydride epitaxy. Here locking ply and active region are grown at 600-640°C. Additionally, this structure includes transition ply of composition varying from p-GaAs to p-AlGaAs. Note that at growing the temperature is increased to 700-760°C. Buffer ply is grown on said transition ply at 700-760°C. Ply growth rate makes from 0.1 to 3 mcm/hour. Metalorganic zinc compound flow is selected to ensure the required concentration of acceptor dopant in grown plies.EFFECT: higher quantum efficiency of photocathode.3 cl, 1 dwg |
申请公布号 |
RU2569042(C1) |
申请公布日期 |
2015.11.20 |
申请号 |
RU20140128762 |
申请日期 |
2014.07.14 |
申请人 |
AKTSIONERNOE OBSHCHESTVO "NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT "POLJUS" IM. M.F. STEL'MAKHA" (AO "NII"POLJUS" IM. M.F. STEL'MAKHA") |
发明人 |
ANDREEV ANDREJ JUR'EVICH;MARMALJUK ALEKSANDR ANATOL'EVICH;PADALITSA ANATOLIJ ALEKSEEVICH;TELEGIN KONSTANTIN JUR'EVICH;TEREKHOV ALEKSANDR SERGEEVICH |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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